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| Silicon Schottky Diode Preliminary Data DBS mixer application to 12 GHz q Low noise figure q Medium barrier type q BAT 14-098 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 14-098 Marking Ordering Code (tape and reel) white A Q62702-A0960 Pin Configuration Package1) SOD-123 Maximum Ratings Parameter Reverse voltage Forward current Power dissipation, TS 80 C Storage temperature range Operating temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol VR IF Ptot Tstg Top Values 4 90 100 - 55 ... + 150 Unit V mA mW - 55 ... + 150 C 770 690 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 1 07.94 BAT 14-098 Electrical Characteristics per Diode at TA = 25 C, unless otherwise specified. Parameter Breakdown voltage IR = 5 A Forward voltage IF = 1 mA IF = 10 mA Forward voltage matching IF = 10 mA Diode capacitance VR = 0, f= 1 MHz Forward resistance IF = 10 mA / 50 mA Symbol min. VBR VF - - VF Values typ. - max. - 4 Unit V 0.43 0.55 - - 5.5 - - 10 0.35 - mV pF - - - CT RF Semiconductor Group 2 BAT 14-098 Forward current IF = f (VF) Forward current IF = f (TS; TA*) *Package mounted on alumina Reverse current IR = f (VR) Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 3 BAT 14-098 S11-Parameters Typical impedance characteristics (with external bias I and Z0 = ) f GHz 1 2 3 4 5 6 7 8 9 10 11 12 I = 0.02 mA MAG ANG 0.95 0.94 0.93 0.92 0.90 0.88 0.85 0.84 0.84 0.86 0.88 0.92 - 12.5 - 26.0 - 42.3 - 61.0 - 84.9 - 110.4 - 139.0 - 167.2 159.8 128.7 95.4 67.3 I = 0.05 mA MAG ANG 0.87 0.87 0.85 0.82 0.79 0.76 0.72 0.73 0.71 0.75 0.79 0.86 - 12.7 - 26.3 - 43.0 - 62.2 - 86.8 - 113.6 - 143.2 - 172.1 153.9 122.9 90.3 63.9 I = 0.1 mA MAG ANG 0.77 0.78 0.73 0.68 0.64 0.59 0.55 0.56 0.55 0.62 0.69 0.78 - 12.8 - 26.5 - 43.2 - 63.2 - 88.8 - 117.2 - 148.5 - 179.3 145.4 114.7 83.7 59.4 I = 0.2 mA MAG ANG 0.58 0.58 0.53 0.44 0.38 0.31 0.28 0.32 0.37 0.46 0.57 0.69 - 12.5 - 25.7 - 42.4 - 62.1 - 91.6 - 125.3 - 165.1 157.8 121.1 93.6 69.0 49.7 I = 0.5 mA MAG ANG 0.20 0.16 0.12 0.07 0.09 0.19 0.26 0.33 0.41 0.49 0.58 0.67 - 3.4 - 5.0 - 0.1 27.5 79.8 85.0 80.1 71.5 61.3 49.5 38.5 28.6 S11 = f (f, I) Semiconductor Group 4 |
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